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| (R) BTB24 B STANDARD TRIACS .HI .COMMUTATI FEATURES DESCRIPTION GH SURGE CURRENT CAPABILITY ON : (dV/dt)c > 10V/s The BTB24 B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 2 . IGT tr 100ns Storage and operating junction temperature range Parameter A1 A2 G TO220AB (Plastic) Value Tc = 90 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 100 Hz 25 260 250 312 50 - 40 to + 150 - 40 to + 125 260 Unit A A I2t dI/dt Tstg Tj Tl A2s A/s C C C Maximum lead temperature for soldering during 10 s at 4.5 mm from case Symbol Parameter 400 BTB24-... B 600 600 700 700 800 800 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 C 400 V October 1998 - Ed: 2A 1/4 BTB24 B THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 1.5 1.1 Unit C/W C/W C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 s) IGM = 4A (tp = 20 s) VGM = 16V (tp = 20 s). ELECTRICAL CHARACTERISTICS Symbol IGT VD=12V Test Conditions (DC) RL=33 Tj=25C Quadrant I-II-III-IV I-II-III IV VGT VGD IL IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * VD=12V (DC) RL=33 VD=VDRM RL=3.3k IG=1.2 IGT IT= 500mA gate open ITM= 35A tp= 380s VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open (dI/dt)c = 11.1A/ms Tj=25C Tj=125C Tj=25C Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C Tj=125C I-II-III-IV I-II-III-IV I-III-IV II MAX MAX MAX MAX MIN MIN MIN MAX MAX MAX MIN MAX Suffix 5 50 100 1.3 0.2 70 150 50 1.6 5 2 750 10 mA V A mA V/s V/s V V mA Unit mA * For either polarity of electrode A2 voltage with reference to electrode A1. Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. 35 30 25 20 15 10 5 0 P(W) 35 = 180 = 120 = 90 = 60 180 P(W) Rth=3C/W Rth=2C/W Rth=1C/W Rth=0C/W Tcase (C) 90 100 110 30 25 20 15 10 5 0 = 180 = 30 IT(rms)(A) 0 5 10 15 20 25 Tamb(C) 0 20 40 60 80 100 120 140 120 125 2/4 BTB24 B Fig. 3: RMS on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. IT(rms)(A) 30 25 20 15 10 5 Tcase(C) 0 0 25 50 75 100 125 0.10 = 180 1.00 K=[Zth/Rth] Zth(j-c) Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). IGT,IH[Tj] / IGT,IH[Tj=25C] 2.5 2.0 1.5 1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140 IH IGT Fig. 6: Non Repetitive surge peak on-state current versus number of cycles. ITSM(A) 220 200 180 160 140 120 100 80 60 40 20 0 Tj initial=25C F=50Hz Number of cycles 1 10 100 1000 Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). 1000 ITSM(A),It(As) Tj initial=25C ITM(A) 300 Tj=25C 100 500 ITSM Tj=Tj max. It 10 200 tp(ms) 100 1 2 5 10 Tj max.: Vto=0.95V Rt=19m VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 3/4 BTB24 B PACKAGE MECHANICAL DATA TO220AB Plastic B I L b2 C REF. F A l1 a1 l3 a2 l2 b1 b1 c1 e e c2 A a1 a2 B b1 b2 C c1 c2 e F I L I1 l2 l3 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 14.23 15.87 0.560 0.625 4.50 0.177 12.70 14.70 0.500 0.579 10.20 10.45 0.402 0.411 0.64 0.96 0.025 0.038 1.15 1.39 0.045 0.055 4.48 4.82 0.176 0.190 0.35 0.65 0.020 0.026 2.10 2.70 0.083 0.106 2.29 2.79 0.090 0.110 5.85 6.85 0.230 0.270 3.55 4.00 0.140 0.157 2.54 3.00 0.100 0.118 1.30 0.051 1.45 1.75 0.057 0.069 0.80 1.20 0.031 0.047 Cooling method : C Marking : type number Weight : 2.25 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Austral ia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 4/4 |
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